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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA963
DESCRIPTION With TO-126 package Complement to type 2SC2209 High collector power dissipation APPLICATIONS For low-frequency power amplification
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute Maximun Ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -50 -40 -5 -1.5 -3 10 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SA963
SYMBOL
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-2mA;IB=0
-40
V
V(BR)CBO VCEsat
Collector-base breakdown voltage
IC=-1mA ;IE=0 IC=-1.5A ;IB=-150mA
-50
V
Collector-emitter saturation voltage
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-2A ;IB=-0.2A
-1.5
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-1
|I
A
ICEO
Collector cut-off current
VCE=-10V; IB=0
-100
|I
A
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
|I
A
hFE COB
DC current gain
IC=-1A ; VCE=-5V IE=0 ; VCB=-5V;f=1MHz
80
220
Output capacitance
70
pF
fT
Transition frequency
IE=0.5A ; VCB=-5V,f=200MHz
150
MHz
hFE Classifications Q 80-160 R 120-220
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA963
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA963
4


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